File:2semiinf.jpg

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(a) Net energy flux between medium 1 (at 400 K) and medium 2 (at 300 K) versus the gap width for Si at different doping levels. The dash-dotted line refers to the net energy transfer between two blackbodies maintained at 400 and 300 K, respectively; and (b) effect of doping on the net energy transfer between two doped Si plates separated by 1 nm vacuum gap.

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current06:11, 1 March 2012Thumbnail for version as of 06:11, 1 March 2012926×390 (90 KB)Kpark75 (Talk | contribs) ((a) Net energy flux between medium 1 (at 400 K) and medium 2 (at 300 K) versus the gap width for Si at different doping levels. The dash-dotted line refers to the net energy transfer between two blackbodies maintained at 400 and 300 K, respectively; and ()
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